rf0 1087 -1 , rev a ( 9/1 8 /13 ) ?201 3 microsemi corporation page 1 of 5 usbqnm50403 e3 C usbqnm50 424 e3 available 500 w, non - magnetic low capacitance unidirecti onal tvs description this transient voltage suppressor (tvs) is assembled in a non - magnetic qfn - 143 package with a le adframe 100% free of iron. it has the same pinout and footprint as the sot - 143 package and is aimed at applications in mri machines and other magnetic environments where the use of ferrous metals is not acceptable. the configuration gives protection to 1 uni - directional data or interface line. it is designed for use in applications where low capacitance protection is required at the board leve l from voltage transients caused by electrostatic discharge (esd) as defined in iec 61000 -4- 2, electrical fast transients (eft) per iec 61000 - 4- 4 and the secondary effects of lightning. these tvs arrays have a peak power rating of 500 watts for an 8/20 s pulse (figure 1). with a capacitance of only 3 pf, this part can provide protection to very fast data lines including usb at 900 mbits/sec. qfn - 143 also available : bidirectional ( qfn - 143 ) usbqnm50403ce3 C usbqnm50424ce3 important: for the latest information, visit our website http://www.mi crosemi.com . features ? protects 1 un idirectional line ? surge protection per iec 61000 -4- 2 and iec 61000 -4-4 ? ultra low capacitance ? low profile surface mount package ? rohs compliant versions are available applications / benefits ? eia rs485 data rates: 5 mbps ? 10 base - t ethernet ? usb data rate 900 mbps ? non - magnetic for mri applications maximum ratings @ 25 oc unless otherwise noted parameters/test conditions symbol value unit storage temperature t stg -5 5 to +1 50 o c junction temperature t j -5 5 to +1 25 o c peak pulse p ower d issipation with a 10/1000s waveform ( with a duty factor of 0.01% ) p pp 500 w solder temperature @ 10 s 260 o c msc C lawrence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 or (978) 620 -2 600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com halogen free downloaded from: http:///
rf0 1087 -1 , rev a ( 9/1 8 /13 ) ?201 3 microsemi corporation page 2 of 5 usbqnm50403 e3 C usbqnm50 424 e3 mechanical and packaging ? case: void - free transfer molded thermosetting epoxy body meeting ul94v -0. ? terminals: rohs c ompliant annealed matte -t in plating over eftec64t non - magne tic copper alloy. readily solderable per mil - s td - 750, method 2026 . ? marking: body marked with part number code (nxx) . ? polarity: dot in corner indicates pin 1 . ? tape - and - reel: standard per eia - 481 - b (add tr suffix to part number) . consult factory for q uantities. ? w eight: approximately 16.53 milligrams ? see p ackage d imensions on last page. part nomenclature usb q nm 5 04 03 e3 usb suitable q fn - 143 package non - magnetic 500 w p pp rating rohs compl ian t rated standoff voltage (v wm ) (see electrical characteristics table) 4 pin package symbols & definitions symbol definition v(br) temperature coefficient of breakdown voltage: the change in breakdown voltage divided by the change in temperature that caused it expressed in %/ c or mv/ c. i (b r) breakdown current: the current used for measuring b reakdown v oltage v (br) . i d standby current: the current through the device at rated stand - off voltage. i pp peak impulse current: the maximum rated random recurring peak impulse current or nonrepetitive peak imp ulse current that may be applied to a device. a random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the nex t transient arrives. v (br) breakdown voltage: the voltage across the device at a specified current i (br) in the breakdown region. v c clamping voltage: the voltage across the device in a region of low differential resistance during the application of an impulse current (i pp ) for a specified waveform. v wm wo rking s tandoff v oltage: the maximum - rated value of dc or repetitive peak positive cathode - to - anode voltage that may be continuously applied over the standard operating temperature. electrical characteristics @ 25 oc unless otherwise stated part number device marking stand - off voltage v wm volts breakdown voltage v ( br ) @ 1 ma volts clamping voltage v c @ 1 amp (figure 2) volts cla mping voltage v c @ 5 amp (figure 2) volts standby current i d @ v wm a capacitance (f= 1 mhz) c @ 0 v pf temperature coefficient of v ( br ) v( br ) mv/c max min max max max max max usb qnm 50403e3 n03 3.3 4 .0 8 .0 11 200 3 -5 usb qnm 50405e3 n05 5.0 6.0 10.8 12 40 3 1 usb qnm50412e3 n12 12.0 13.3 19 .0 26 1 3 8 usb qnm50415e3 n15 15.0 16.7 24 .0 32 1 3 11 usb qnm50424e3 n24 24.0 26.7 43 .0 57 1 3 28 downloaded from: http:///
rf0 1087 -1 , rev a ( 9/1 8 /13 ) ?201 3 microsemi corporation page 3 of 5 usbqnm50403 e3 C usbqnm50 424 e3 graphs tp C pulse time C s figure 1 peak pulse power vs. pulse time t ime C s f igure 2 pulse waveform i pp peak pulse current - % i pp p pp C peak pulse power - kw downloaded from: http:///
rf0 1087 -1 , rev a ( 9/1 8 /13 ) ?201 3 microsemi corporation page 4 of 5 usbqnm50403 e3 C usbqnm50 424 e3 package dimensions pa d layout see schematic on next page ref. dimensions i nch millimeters min max min max a 0.112 0.116 2.85 2.95 b 0.096 0.100 2.45 2.55 c 0.0354 0.0366 0.900 0.930 d 0.020 0.024 0.50 0.60 e 0.031 nom 0.80 nom f 0.069 nom 1.75 nom g 0.018 nom 0.45 nom h 0.076 nom 1.92 nom ref. dimensions inch millimeters nominal nominal a1 0.112 2.85 a2 0.079 2.00 a3 0.071 1.80 b1 0.108 2.75 b2 0.075 1.90 c 0.041 1.05 d 0.033 0.85 e 0.032 0.80 f 0.033 0.85 g 0.047 1.20 downloaded from: http:///
rf0 1087 -1 , rev a ( 9/1 8 /13 ) ?201 3 microsemi corporation page 5 of 5 usbqnm50403 e3 C usbqnm50 424 e3 schematic seen from above downloaded from: http:///
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